Nicolas Faralli

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Fabio Alessio Marino, Nicolas Faralli, Tomás Palacios et al. · IEEE Transactions on Electron Devices · 2009 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Edge Dislocations +11

The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

R. Akis, J. S. Ayubi‐Moak, Nicolas Faralli et al. · IEEE Electron Device Letters · 2008 · 49 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Figures of merit in high-frequency and high-power GaN HEMTs

Fabio Alessio Marino, Nicolas Faralli, D. K. Ferry et al. · Journal of Physics Conference Series · 2009 · 28 citations · Full text

Electrical Engineering, Engineering, Microwave Device Modeling +14

Rigid ion model of high field transport in GaN

Shinya Yamakawa, R. Akis, Nicolas Faralli et al. · Journal of Physics Condensed Matter · 2009 · 23 citations

Electrical Engineering, High Field Transport, Engineering +12

Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations

Diego Guerra, Marco Saraniti, Nicolas Faralli et al. · IEEE Transactions on Electron Devices · 2010 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10