Shinya Yamakawa - Concepedia

Author

Shinya Yamakawa

Arizona State University

Also Known As

Shinya YAMAKAWA, Shinya Yamakawa, Yamakawa, Shinya

Publications

385

Citations

H-Index

Concepts

All Affiliations

Arizona State University Meiji University Illinois Institute of Technology The University of Osaka

About

Shinya Yamakawa is an author at Arizona State University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	338
2	Applied Physics	10	10	338
3	Electrical Engineering	9	9	323
4	Chemical Engineering	1	1	15
5	Materials Engineering	1	1	15

Shinya Yamakawa

Publications

349

Citations

H-Index

Page 1

	Year	Citations
Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method Shinya Yamakawa, Hiroaki Ueno, Kenji Taniguchi, Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor DeviceSi Inversion LayersSemiconductors	1996	146
Influence of the electron–phonon interaction on electron transport in wurtzite GaN Shinya Yamakawa, Shela Aboud, Marco Saraniti, Semiconductor Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringCategoryquantum ElectronicsEngineering	2004	33
Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy Munehisa Takei, Daisuke Kosemura, Kohki Nagata, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringChannel Strain AnalysisEngineeringChannel Strain	2010	30
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AlGaN/GaN HEMTs Shinya Yamakawa, Stephen M. Goodnick, Shela Aboud, Journal of Computational Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2004	28
Rigid ion model of high field transport in GaN Shinya Yamakawa, R. Akis, Nicolas Faralli, Journal of Physics Condensed Matter Electrical EngineeringHigh Field TransportEngineeringRigid Ion ModelPhysics	2009	23
High-Performance Metal/High-$k$ n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates Satoru Mayuzumi, Shinya Yamakawa, Y. Tateshita, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringEngineeringHigh-performance Metal/high-Nanoelectronics	2009	23
Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe Satoru Mayuzumi, Shinya Yamakawa, Daisuke Kosemura, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2009	15
Insights into different etching properties of continuous wave and atomic layer etching processes for SiO2 and Si3N4 films using voxel-slab model Nobuyuki Kuboi, Tetsuya Tatsumi, Jun Komachi, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorAtomic LayerChemical EngineeringNanoelectronics	2019	15
Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs Satoru Mayuzumi, Shinya Yamakawa, Daisuke Kosemura, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsNanoelectronicsStress-induced Leakage Current	2010	13
(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs Toshiaki Tsuchiya, Naoyoshi Tamura, Akihito Sakakidani, ECS Transactions Electrical EngineeringHigh/low DrainEngineeringSemiconductor DeviceOxide Traps Participating	2013	12

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