Daisuke Kosemura - Concepedia

Author

Daisuke Kosemura

Meiji University

Also Known As

D Kosemura, D. Kosemura, Daisuke Kosemura

129

Publications

707

Citations

H-Index

Concepts

All Affiliations

Meiji University Japan Society for the Promotion of Science IMEC National Institute of Advanced Industrial Science and Technology Japan Synchrotron Radiation Research Institute

About

Daisuke Kosemura is an author at Meiji University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	25	511
2	Applied Physics	15	25	511
3	Materials Science	13	18	385
4	Electrical Engineering	12	13	242
5	Materials Engineering	6	6	80

Daisuke Kosemura

Publications

541

Citations

H-Index

Page 1

	Year	Citations
UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si Atsushi Ogura, Kosuke Yamasaki, Daisuke Kosemura, Japanese Journal of Applied Physics Materials ScienceStrain MappingEngineeringUv-raman Spectroscopy SystemOptical Properties	2006	93
Transverse-optical phonons excited in Si using a high-numerical-aperture lens Daisuke Kosemura, Atsushi Ogura Applied Physics Letters Materials SciencePhotonicsEngineeringPhysicsWave Optic	2010	34
Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors Aya Seike, Tomoyuki Tange, Yasushi Sugiura, Applied Physics Letters Materials ScienceDevice ModelingElectrical EngineeringEngineeringNanotechnology	2007	32
Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy Munehisa Takei, Daisuke Kosemura, Kohki Nagata, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringChannel Strain AnalysisEngineeringChannel Strain	2010	30
Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor Daisuke Kosemura, Yasuto Kakemura, T. Yoshida, Japanese Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2008	24
High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes Keiji Ikeda, Mizuki Ono, Daisuke Kosemura, Materials ScienceSemiconductorsElectrical EngineeringMetal Source/drain StructureGe Nanowire Mosfets	2012	21
Experimental Benchmarking of Electrical Methods and <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math> </inline-formula>-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs Vice Sodan, Daisuke Kosemura, Steve Stoffels, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringExperimental BenchmarkingElectrical MethodsRf Semiconductor	2016	20
Three-dimensional micro-Raman spectroscopy mapping of stress induced in Si by Cu-filled through-Si vias Daisuke Kosemura, Ingrid De Wolf Applied Physics Letters EngineeringMechanical EngineeringSilicon On InsulatorNanoelectronicsStressstrain Analysis	2015	18
Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringFin-height EffectNanoelectronicsI Xmlns	2012	18
Measurement of in-plane and depth strain profiles in strained-Si substrates Atsushi Ogura, Daisuke Kosemura, Kosuke Yamasaki, Solid-State Electronics Depth Strain ProfilesEngineeringPhysicsStrain LocalizationApplied Physics	2007	17

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