Munehisa Takei

Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy

Munehisa Takei, Daisuke Kosemura, Kohki Nagata et al. · Journal of Applied Physics · 2010 · 30 citations

Engineering, Electrical Engineering, Materials Science +13

Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation

Motohiro Tomita, Daisuke Kosemura, Munehisa Takei et al. · Japanese Journal of Applied Physics · 2011 · 16 citations

Engineering, Materials Engineering, Materials Science +17

Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners

Daisuke Kosemura, Munehisa Takei, Kohki Nagata et al. · Japanese Journal of Applied Physics · 2009 · 15 citations

Engineering, Electrical Engineering, Materials Science +15

Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe

Satoru Mayuzumi, Shinya Yamakawa, Daisuke Kosemura et al. · IEEE Transactions on Electron Devices · 2009 · 15 citations

Engineering, Electrical Engineering, Materials Science +12

Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition

Munehisa Takei, Daisuke Kosemura, Hiroaki Akamatsu et al. · Japanese Journal of Applied Physics · 2011 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +12