Publication | Closed Access
Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor
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Citations
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References
2008
Year
Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline DefectsStress-induced Leakage CurrentOxide ElectronicsOxide SemiconductorsApplied PhysicsHigh-performance Metal–oxide–semiconductor Field-effect-transistorDaisuke KosemuraSemiconductor DeviceYasuto Kakemura
Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor, Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi
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