Publication | Closed Access
Influence of the electron–phonon interaction on electron transport in wurtzite GaN
33
Citations
9
References
2004
Year
SemiconductorsWide-bandgap SemiconductorElectrical EngineeringCategoryquantum ElectronicsEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsElectron–phonon InteractionCalculated Deformation PotentialsElectron TransportGan Power DeviceDeformation PotentialsWurtzite GanCategoryiii-v SemiconductorRigid Pseudo-ion Model
A full-band electron transport calculation in wurtzite phase GaN based on an accurate model of electron–phonon interactions using a rigid pseudo-ion model is reported. The calculated deformation potentials are used to estimate the scattering rate in a cellular Monte Carlo (CMC) simulator. Longitudinal optical (LO)-like and transverse optical (TO)-like polar optical phonon scatterings are also employed in this work. The calculated velocity is lower than the previous works which used fixed deformation potentials.
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