P. Vanmeerbeek

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri et al. · IEEE Transactions on Electron Devices · 2015 · 118 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +16

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee et al. · 2015 · 109 citations

Engineering, Gan Power Devices, Power Electronics +16

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren et al. · 2015 · 77 citations · Full text

Wide-bandgap Semiconductor, Dynamic Ron, Electrical Engineering +12

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J. Uren, Markus Caesar, Serge Karboyan et al. · IEEE Electron Device Letters · 2015 · 72 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14