Concepedia

Author

Serge Karboyan

University of Bristol

Also Known As

Karboyan, Serge, S Karboyan, S. Karboyan, Serge Karboyan

40

Publications

850

Citations

13

H-Index

18

Concepts

All Affiliations

University of BristolON Semiconductor (Belgium)ON Semiconductor (United States)United Monolithic Semiconductor (France)University of Padua
SK

About

Serge Karboyan is an author at University of Bristol specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

10

11

445

2

Applied Physics

10

10

420

3

Electrical Engineering

10

11

445

4

Computer Engineering

1

1

25

5

Materials Engineering

1

1

31

Serge Karboyan

×

17

Publications

798

Citations

13

H-Index

YearCitations

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee,

IEEE Transactions on Electron Devices

2017

226

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren,

2015

77

Pulsed Large Signal RF Performance of Field-Plated Ga<sub>2</sub>O<sub>3</sub> MOSFETs

Manikant Singh, Michael A. Casbon, Michael J. Uren,

IEEE Electron Device Letters

2018

77

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J. Uren, Markus Caesar, Serge Karboyan,

IEEE Electron Device Letters

2015

72

Atomic layer deposited <i>α</i> -Ga <sub>2</sub> O <sub>3</sub> solar-blind photodetectors

Jerome V. Moloney, Oliver Tesh, Manikant Singh,

Journal of Physics D Applied Physics

2019

51

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Manikant Singh, Michael J. Uren, Trevor Martin,

IEEE Transactions on Electron Devices

2018

46

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Indranil Chatterjee, Michael J. Uren, Serge Karboyan,

IEEE Transactions on Electron Devices

2017

38

The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

Feiyuan Yang, Stefano Dalcanale, Mark Gajda,

IEEE Transactions on Electron Devices

2020

37

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

William M. Waller, Mark Gajda, Saurabh Pandey,

IEEE Transactions on Electron Devices

2017

31

On the origin of dynamic Ron in commercial GaN-on-Si HEMTs

Serge Karboyan, Michael J. Uren, Manikant,

Microelectronics Reliability

2017

31

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