Concepedia

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren, Matteo Meneghini, Serge Karboyan, Indranil Chatterjee, P. Vanmeerbeek, Markus Cäsar, C. Liu, Ali Salih,

2015 · 80 citations · 9 references

Open access

Abstract

The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

References

9

Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps

Murray A. Lampert · Physical Review · 1956 · 1.3K citations

Natural Sciences, Electrical Engineering, Physics +17

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee et al. · 2015 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J. Uren, Markus Caesar, Serge Karboyan et al. · IEEE Electron Device Letters · 2015 · 77 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Man Ho Kwan, King‐Yuen Wong, Y. S. Lin et al. · 2014 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Commercialization and reliability of 600 V GaN power switches

T. Kikkawa, Tsutomu Hosoda, K. Shono et al. · 2015 · 36 citations

Engineering, Electrical Engineering, Materials Science +17