Michael J. Uren - Concepedia

Author

Michael J. Uren

University of Bristol ORCID

Also Known As

M J Uren, M Uren, M. J. Uren, M. Uren, M.J Uren, M.J. Uren, MJ Uren, Michael J Uren, Michael J. UREN, Michael J. Uren

370

Publications

12.3K

Citations

H-Index

116

Concepts

All Affiliations

University of Bristol Qinetiq (United Kingdom)Cardiff University University of Southampton University of Cambridge

About

Michael J. Uren is an author at University of Bristol specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	50	153	11.3K
2	Applied Physics	49	142	11K
3	Natural Sciences	6	6	419
4	Chemical Engineering	2	2	78
5	Education	1	1	11

Michael J. Uren

169

Publications

11.8K

Citations

H-Index

Page 1

	Year	Citations
Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise M. J. Kirton, Michael J. Uren Advances In Physics EngineeringIntegrated CircuitsDefect ToleranceAlternate CaptureSemiconductor Device	1989	1.2K
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
An experimental and theoretical study of the formation and microstructure of porous silicon M.I.J. Beale, J. D. Benjamin, Michael J. Uren, Journal of Crystal Growth Materials SciencePore StructureTheoretical StudyEngineeringPhysics	1985	494
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy Martin Kuball, Joseph M. Hayes, Michael J. Uren, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2002	345
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs Michael J. Uren, Janina Möreke, Martin Kuball IEEE Transactions on Electron Devices Drift Diffusion SimulationsElectrical EngineeringBulk Trap-induced ComponentEngineeringSemiconductor Device	2012	332
1/<i>f</i> and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors Michael J. Uren, D. J. Day, M. J. Kirton Applied Physics Letters Semiconductor TechnologyRoom TemperatureElectrical EngineeringF SpectrumEngineering	1985	310
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices Andrei Sarua, Hangfeng Ji, K.P. Hilton, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringHigh Temperature MaterialsEngineeringDetermined Effective Tbr	2007	287
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures Andrei Sarua, Hangfeng Ji, Martin Kuball, IEEE Transactions on Electron Devices Aluminium NitrideWide-bandgap SemiconductorEngineeringAlgan/gan Transistor StructuresNanoelectronics	2006	255
Microstructure and formation mechanism of porous silicon M.I.J. Beale, N. G. Chew, Michael J. Uren, Applied Physics Letters Materials ScienceMaterials EngineeringEngineeringNanoporous MaterialSilicon Dopant Type	1985	241
“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs Michael J. Uren, Serge Karboyan, Indranil Chatterjee, IEEE Transactions on Electron Devices	2017	226

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