IEEE Electron Device Letters · 2002 · 345 citations · 10 references
Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceTemperature MapsSic SubstratesActive Algan/gan HfetsThermodynamicsHeat TransferMicroelectronicsThermal Engineering
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with /spl ap/1 μm spatial resolution and a temperature accuracy of better than 10/spl deg/C. Significant temperature rises up to 180/spl deg/C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had /spl sim/5 times lower thermal resistance.
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Very-high power density AlGaN/GaN HEMTs
Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 549 citations