Ali Salih

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Engineering, Electrical Engineering, Materials Engineering +17

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren et al. · 2015 · 80 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch

Z. John Shen, Zhenyu Miao, Aref Moradkhani Roshandeh et al. · 2016 · 41 citations

Engineering, Electrical Engineering, Energy Systems +15

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

P. Moens, Abhishek Banerjee, A. Constant et al. · ECS Transactions · 2016 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Breakthroughs for 650-V GaN Power Devices: Stable high-temperature operations and avalanche capability

Charlie Liu, Ali Salih, Balaji Padmanabhan et al. · IEEE Power Electronics Magazine · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Engineering +17