A. Constant

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

GaN transistor characteristics at elevated temperatures

Amador Pérez‐Tomás, Marcel Placidi, N. Baron et al. · Journal of Applied Physics · 2009 · 86 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Amador Pérez‐Tomás, Marcel Placidi, X. Perpiñà et al. · Journal of Applied Physics · 2009 · 46 citations · Full text

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +13

Investigation on boron carbide oxidation for nuclear reactor safety: Experiments in highly oxidising conditions

N. Cocuaud, D. Drouan, A. Constant et al. · Journal of Nuclear Materials · 2007 · 39 citations

Materials Science, Chemical Engineering, Engineering +10

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

A. Constant, J. Baele, P. Coppens et al. · Journal of Applied Physics · 2016 · 37 citations

Materials Science, Aluminium Nitride, Ti/al Atomic Ratio +14