N. Baron

GaN transistor characteristics at elevated temperatures

Amador Pérez‐Tomás, Marcel Placidi, N. Baron et al. · Journal of Applied Physics · 2009 · 86 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet et al. · Journal of Applied Physics · 2013 · 66 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, Sébastien Chenot et al. · Journal of Applied Physics · 2009 · 52 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi et al. · Applied Physics Letters · 2011 · 52 citations · Full text

Materials Science, Total Contact Area, Electrical Engineering +15

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Y. Cordier, M. Azize, N. Baron et al. · Journal of Crystal Growth · 2007 · 35 citations

Materials Science, Materials Engineering, Electrical Engineering +8