N. Baron - Concepedia

Author

N. Baron

Centre National de la Recherche Scientifique

Also Known As

N Baron, N. Baron, N. M. Baron, Nicholas Baron

Publications

587

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Institut de Microelectrònica de Barcelona Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications University of Warwick Centre de Recerca Matemàtica

About

N. Baron is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	541
2	Applied Physics	15	17	541
3	Electrical Engineering	13	14	474
4	Materials Science	7	7	224
5	Materials Engineering	4	4	123

N. Baron

Publications

541

Citations

H-Index

Page 1

	Year	Citations
GaN transistor characteristics at elevated temperatures Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesHigh Temperature Characteristics	2009	86
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesAlgan/gan Vertical Bulk	2013	66
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) N. Baron, Y. Cordier, Sébastien Chenot, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideEngineeringElectrical PropertiesNanoelectronics	2009	52
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Applied Physics Letters Materials ScienceTotal Contact AreaElectrical EngineeringGan TechnologyEngineering	2011	52
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y. Cordier, M. Azize, N. Baron, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	35
High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates R. Cuerdo, F. Calle, Alejandro F. Braña, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesHigh Temperature Behaviour	2008	32
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Microelectronic Engineering Wide-bandgap SemiconductorElectrical EngineeringEngineeringTemperature DependenceApplied Physics	2011	26
Growth of GaN based structures on Si(110) by molecular beam epitaxy Y. Cordier, J. C. Moreno, N. Baron, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsGan Power Device	2010	25
Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance Amador Pérez‐Tomás, A. Fontserè, Marcel Placidi, Semiconductor Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2012	25
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y. Cordier, N. Baron, Sébastien Chenot, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringGrowth TemperatureApplied Physics	2008	23

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