AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination - Concepedia

Concepedia

Publication | Closed Access

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

35

Citations

15

References

2007

Year

Y. Cordier, M. Azize, N. Baron, Sébastien Chenot, O. Tottereau, J. Massies

Journal of Crystal Growth

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceEpi-ready Semi-insulating Gan-on-sapphireAlgan/gan HemtsInhibited Interface Contamination

References

	Year	Citations

Page 1