J. Massies - Concepedia

Author

J. Massies

Centre National de la Recherche Scientifique

Also Known As

J Massies, J. Massies, Massies, J., Massies, Jeans

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Université de Montpellier Commissariat à l'Énergie Atomique et aux Énergies Alternatives Université Toulouse III - Paul Sabatier

About

J. Massies is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	20	1.1K
2	Applied Physics	15	20	1.1K
3	Electrical Engineering	4	4	121
4	Natural Sciences	2	2	94
5	Materials Engineering	2	2	49

J. Massies

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells Marcel Leroux, N. Grandjean, M. Laügt, Physical review. B, Condensed matter Materials ScienceQuantum ScienceStark EffectAluminium NitrideN/gan Quantum Wells	1998	427
Asymmetric versus symmetric dimerization on the Si(001) and As/Si(001)2 × 1 reconstructed surfaces as observed by grazing incidence X-ray diffraction N. Jedrecy, M. Sauvage-Simkin, R. Pinchaux, Surface Science Materials ScienceReconstructed SurfacesIncidence X-ray DiffractionSurface CharacterizationEngineering	1990	115
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes Sokratis Kalliakos, X. B. Zhang, T. Taliercio, Applied Physics Letters Categoryquantum ElectronicsEngineeringLarge Size DependenceSemiconductor NanostructuresSemiconductors	2002	68
ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth V. H. Etgens, M. Sauvage-Simkin, R. Pinchaux, Physical review. B, Condensed matter Materials ScienceStrain EvolutionIncidence X-ray DiffractionEpitaxial GrowthEngineering	1993	60
Excitons in nitride heterostructures: From zero- to one-dimensional behavior Daniel Rosales, T. Bretagnon, Bernard Gil, Physical Review B EngineeringGan NanostructuresSemiconductor NanostructuresSemiconductorsQuantum Materials	2013	56
Work function measurements on MBE GaAs(001) layers J. Massies, P. Devoldère, Nuyen T. Linh Journal of Vacuum Science and Technology Materials ScienceSemiconductorsElectrical EngineeringSurface CharacterizationEngineering	1979	53
Silver contact on GaAs (001) and InP (001) J. Massies, P. Devoldère, Nuyen T. Linh Journal of Vacuum Science and Technology SemiconductorsMaterials ScienceSurface PreparationIi-vi SemiconductorEngineering	1978	51
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y. Cordier, M. Azize, N. Baron, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	35
Ultrahigh-vacuum four-circle diffractometer for grazing incidence x-ray diffraction on <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> MBE grown III-V semiconductor surfaces P. Claverie, J. Massies, R. Pinchaux, Review of Scientific Instruments X-ray SpectroscopyEngineeringSynchrotron Radiation SourceX-ray ImagingMaterials Science	1989	26
Direct signature of strained GaN quantum dots by Raman scattering J. Gleize, F. Demangeot, J. Frandon, Applied Physics Letters Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringGan Dots	2001	22

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