V. H. Etgens

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers

N. Grandjean, J. Massies, V. H. Etgens · Physical Review Letters · 1992 · 145 citations · Full text

Semiconductors, Materials Science, Surfactant Applies +12

Asymmetric versus symmetric dimerization on the Si(001) and As/Si(001)2 × 1 reconstructed surfaces as observed by grazing incidence X-ray diffraction

N. Jedrecy, M. Sauvage-Simkin, R. Pinchaux et al. · Surface Science · 1990 · 115 citations

Materials Science, Reconstructed Surfaces, Incidence X-ray Diffraction +9

Finite element analysis of the effect of process-induced voids on the fatigue lifetime of a lead-free solder joint under thermal cycling

Van Nhat Le, Lahouari Benabou, V. H. Etgens et al. · Microelectronics Reliability · 2016 · 101 citations

Materials Science, Fatigue Lifetime, Engineering +11

Room temperature ferromagnetism of Co doped CeO2−δ diluted magnetic oxide: Effect of oxygen and anisotropy

Boris Vodungbo, Y. Zheng, F. Vidal et al. · Applied Physics Letters · 2007 · 99 citations

Srtio3 Ceria, Magnetic Properties, Engineering +20

Surfactant mediated epitaxial growth of In<i>x</i>Ga1−<i>x</i>As on GaAs (001)

J. Massies, N. Grandjean, V. H. Etgens · Applied Physics Letters · 1992 · 81 citations · Full text