J. Massies

Temperature quenching of photoluminescence intensities in undoped and doped GaN

M. Leroux, N. Grandjean, B. Beaumont et al. · Journal of Applied Physics · 1999 · 504 citations · Full text

Wide-bandgap Semiconductor, Engineering, Temperature Quenching +16

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano, N. Grandjean, F. Sèmond et al. · Applied Physics Letters · 1999 · 283 citations · Full text

Materials Science, Photonics, Semiconductors +15

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean, B. Damilano, S. Dalmasso et al. · Journal of Applied Physics · 1999 · 262 citations · Full text

Wide-bandgap Semiconductor, Engineering, Physics +11

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Pierre Lefèbvre, A. Morel, Mathieu Gallart et al. · Applied Physics Letters · 2001 · 218 citations · Full text

Wide-bandgap Semiconductor, Photonics, Time-resolved Photoluminescence Spectroscopy +14

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N. Grandjean, J. Massies, M. Leroux · Applied Physics Letters · 1996 · 191 citations · Full text

Materials Science, Aluminium Nitride, Optical Materials +15