S. Dalmasso

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean, B. Damilano, S. Dalmasso et al. · Journal of Applied Physics · 1999 · 262 citations · Full text

Wide-bandgap Semiconductor, Engineering, Physics +11

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

P. Vennéguès, M. Benaı̈ssa, B. Beaumont et al. · Applied Physics Letters · 2000 · 122 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +12

Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

B. Damilano, N. Grandjean, S. Dalmasso et al. · Applied Physics Letters · 1999 · 119 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +21

Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès, M. Leroux, S. Dalmasso et al. · Physical review. B, Condensed matter · 2003 · 87 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +12

High-temperature annealing and optical activation of Eu-implanted GaN

K. Lorenz, U. Wahl, E. Alves et al. · Applied Physics Letters · 2004 · 69 citations

Materials Science, Aluminium Nitride, Electrical Engineering +14