M. Leroux

Temperature quenching of photoluminescence intensities in undoped and doped GaN

M. Leroux, N. Grandjean, B. Beaumont et al. · Journal of Applied Physics · 1999 · 511 citations · Full text

Engineering, Materials Engineering, Materials Science +14

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano, N. Grandjean, F. Sèmond et al. · Applied Physics Letters · 1999 · 284 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 271 citations

Engineering, Materials Engineering, Materials Science +17

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

N. Grandjean, B. Damilano, S. Dalmasso et al. · Journal of Applied Physics · 1999 · 263 citations · Full text

Natural Sciences, Materials Science, Physics +17

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N. Grandjean, J. Massies, M. Leroux · Applied Physics Letters · 1996 · 192 citations · Full text

Engineering, Materials Engineering, Materials Science +17