N. Grandjean - Concepedia

Author

N. Grandjean

École Polytechnique Fédérale de Lausanne ORCID

Also Known As

Grandjean, N, Grandjean, N., Grandjean, N. (N), Grandjean, Nicolas, LEROUX, M, Leroux, Mathieu, M Leroux, M. ILEGEMS, N Grandjean, N R Grandjean

787

Publications

20K

Citations

H-Index

116

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Université de Montpellier TU Wien

About

N. Grandjean is an author at École Polytechnique Fédérale de Lausanne specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	67	297	15.4K
2	Applied Physics	67	296	15.4K
3	Natural Sciences	8	8	327
4	Chemistry	7	7	248
5	Chemical Engineering	2	2	51

N. Grandjean

356

Publications

18.7K

Citations

H-Index

Page 1

	Year	Citations
Room-Temperature Polariton Lasing in Semiconductor Microcavities Stavros Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, Physical Review Letters	2007	990
Temperature quenching of photoluminescence intensities in undoped and doped GaN M. Leroux, N. Grandjean, B. Beaumont, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTemperature QuenchingA Exciton PopulationOptoelectronic Devices	1999	504
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells Marcel Leroux, N. Grandjean, M. Laügt, Physical review. B, Condensed matter Materials ScienceQuantum ScienceStark EffectAluminium NitrideN/gan Quantum Wells	1998	427
Current status of AlInN layers lattice-matched to GaN for photonics and electronics R. Butté, J.‐F. Carlin, E. Feltin, Journal of Physics D Applied Physics	2007	325
Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity Gabriel Christmann, R. Butté, E. Feltin, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsEngineeringPolariton Dynamic	2008	317
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures M. Gonschorek, J.‐F. Carlin, E. Feltin, Applied Physics Letters Materials ScienceAl0.82in0.18n∕gan Material SystemElectrical EngineeringAluminium NitrideEngineering	2006	316
From visible to white light emission by GaN quantum dots on Si(111) substrate B. Damilano, N. Grandjean, F. Sèmond, Applied Physics Letters Materials SciencePhotonicsSemiconductorsOptical MaterialsEngineering	1999	283
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells N. Grandjean, B. Damilano, S. Dalmasso, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPhysicsNanoelectronicsQw Transition Energy	1999	262
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser Jeremy J. Baumberg, A. V. Kavokin, Stavros Christopoulos, Physical Review Letters	2008	251
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy Pierre Lefèbvre, A. Morel, Mathieu Gallart, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsTime-resolved Photoluminescence SpectroscopyPhotoluminescenceAccurate Determination	2001	218

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