M. Gonschorek

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butté, J.‐F. Carlin, E. Feltin et al. · Journal of Physics D Applied Physics · 2007 · 325 citations · Full text

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Applied Physics Letters · 2006 · 316 citations · Full text

Materials Science, Al0.82in0.18n∕gan Material System, Electrical Engineering +11

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Farid Medjdoub, J.‐F. Carlin, M. Gonschorek et al. · 2006 · 176 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Journal of Applied Physics · 2008 · 164 citations · Full text

Oxide Heterostructures, Semiconductors, Electrical Engineering +14

205-GHz (Al,In)N/GaN HEMTs

Haifeng Sun, Andreas R. Alt, H. Benedickter et al. · IEEE Electron Device Letters · 2010 · 149 citations · Full text

Gan-based Hemts, Room Temperature, Electrical Engineering +9