Farid Medjdoub - Concepedia

Author

Farid Medjdoub

Institut d'électronique de microélectronique et de nanotechnologie ORCID

Also Known As

Dogmus, E., F Medjdoub, F. MEDJDOUB, F. Medjdoub, Farid Medjdoub, Farid Medjdoub; IEMN, UMR-CNRS 8520, Villeneuve d’Ascq, France, MEDJDOUB, FARID, Medjdoub, F, Medjdoub, F. (F), Medjdoub, F. (Farid)

249

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Institut d'électronique de microélectronique et de nanotechnologie Centre National de la Recherche Scientifique Université de Lille École Polytechnique Fédérale de Lausanne Universität Ulm

About

Farid Medjdoub is an author at Institut d'électronique de microélectronique et de nanotechnologie specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	56	2.5K
2	Applied Physics	29	56	2.5K
3	Electrical Engineering	29	55	2.5K
4	Materials Engineering	7	7	164
5	Education	1	1	13

Farid Medjdoub

Publications

Citations

H-Index

Page 1

	Year	Citations
GaN-based power devices: Physics, reliability, and perspectives Matteo Meneghini, Carlo De Santi, Idriss Abid, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPower DevicesOptoelectronic DevicesPower Electronics	2021	572
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? Farid Medjdoub, J.‐F. Carlin, M. Gonschorek, SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2006	176
Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate Farid Medjdoub, Joff Derluyn, Kai Cheng, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineering	2010	121
Barrier-Layer Scaling of InAlN/GaN HEMTs Farid Medjdoub, M. Alomari, J.‐F. Carlin, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2008	113
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation Kathia Harrouche, Riad Kabouche, Étienne Okada, IEEE Journal of the Electron Devices Society	2019	108
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs Denis Marcon, T. Kauerauf, Farid Medjdoub, Electrical EngineeringGate DegradationEngineeringComprehensive Reliability InvestigationNanoelectronics	2010	86
First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz Farid Medjdoub, Malek Zegaoui, B. Grimbert, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2012	79
Status of the Emerging InAlN/GaN Power HEMT Technology Farid Medjdoub, J.‐F. Carlin, Christophe Gaquière, The Open Electrical & Electronic Engineering Journal	2008	78
High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate Farid Medjdoub, Malek Zegaoui, D. Ducatteau, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2011	74
InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess M. Alomari, Farid Medjdoub, J.‐F. Carlin, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringInaln/gan MoshemtNanoelectronics	2009	71

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