Farid Medjdoub

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo De Santi, Idriss Abid et al. · Journal of Applied Physics · 2021 · 572 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Devices +18

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Farid Medjdoub, J.‐F. Carlin, M. Gonschorek et al. · 2006 · 176 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Farid Medjdoub, Joff Derluyn, Kai Cheng et al. · IEEE Electron Device Letters · 2010 · 121 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Barrier-Layer Scaling of InAlN/GaN HEMTs

Farid Medjdoub, M. Alomari, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2008 · 113 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +14

High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Kathia Harrouche, Riad Kabouche, Étienne Okada et al. · IEEE Journal of the Electron Devices Society · 2019 · 108 citations · Full text