J.‐F. Carlin

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Journal of Applied Physics · 2008 · 164 citations · Full text

Engineering, Materials Science, Physics +17

InAlN/GaN HEMTs: a first insight into technological optimization

J. Kuzmı́k, A. Kostopoulos, J.‐F. Carlin et al. · IEEE Transactions on Electron Devices · 2006 · 138 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Barrier-Layer Scaling of InAlN/GaN HEMTs

Farid Medjdoub, M. Alomari, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2008 · 113 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

S. Sonderegger, E. Feltin, Michele Merano et al. · Applied Physics Letters · 2006 · 89 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Film thickness constraints for manufacturable strained silicon CMOS

J.G. Fiorenza, G. Braithwaite, C. W. Leitz et al. · Semiconductor Science and Technology · 2003 · 83 citations

Engineering, Electrical Engineering, Materials Science +17