C. W. Leitz

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 549 citations

Materials Science, Materials Engineering, Dislocation Densities +15

Carrier mobilities and process stability of strained Si <i>n</i>- and <i>p</i>-MOSFETs on SiGe virtual substrates

M. T. Currie, C. W. Leitz, T. A. Langdo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 248 citations

Semiconductors, Materials Science, Electrical Engineering +14

Strained Ge channel <i>p</i>-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Minjoo Larry Lee, C. W. Leitz, Zhiyuan Cheng et al. · Applied Physics Letters · 2001 · 217 citations

Si1−xgex/si Virtual Substrates, Semiconductor Technology, Electrical Engineering +8

High quality Ge on Si by epitaxial necking

T. A. Langdo, C. W. Leitz, M. T. Currie et al. · Applied Physics Letters · 2000 · 205 citations

Materials Science, Oxide Sidewalls, Engineering +12

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

C. W. Leitz, M. T. Currie, Minjoo Larry Lee et al. · Journal of Applied Physics · 2002 · 169 citations

Semiconductors, Layer Thickness, Electrical Engineering +9