M. T. Currie

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

Engineering, Electrical Engineering, Materials Science +17

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Carrier mobilities and process stability of strained Si <i>n</i>- and <i>p</i>-MOSFETs on SiGe virtual substrates

M. T. Currie, C. W. Leitz, T. A. Langdo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 248 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Ge channel <i>p</i>-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Minjoo Larry Lee, C. W. Leitz, Zhiyuan Cheng et al. · Applied Physics Letters · 2001 · 217 citations

Engineering, Electrical Engineering, Materials Science +16

High quality Ge on Si by epitaxial necking

T. A. Langdo, C. W. Leitz, M. T. Currie et al. · Applied Physics Letters · 2000 · 206 citations

Engineering, Materials Engineering, Materials Science +17