Eugene A. Fitzgerald

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

Engineering, Electrical Engineering, Materials Science +17

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 688 citations

Engineering, Materials Engineering, Materials Science +16

Coherent Phonon Heat Conduction in Superlattices

Maria N. Luckyanova, Jivtesh Garg, Keivan Esfarjani et al. · Science · 2012 · 618 citations

Natural Sciences, Materials Science, Physics +17

Remote epitaxy through graphene enables two-dimensional material-based layer transfer

Yunjo Kim, Samuel Cruz, Kyusang Lee et al. · Nature · 2017 · 594 citations

Natural Sciences, Materials Engineering, Materials Science +11

Dislocations in strained-layer epitaxy: theory, experiment, and applications

Eugene A. Fitzgerald · Materials Science Reports · 1991 · 569 citations

Natural Sciences, Materials Engineering, Materials Science +12