Y. H. Xie

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 688 citations

Engineering, Materials Engineering, Materials Science +16

Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 261 citations

Engineering, Materials Science, Physics +17

Microstructure of erbium-implanted Si

D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 154 citations

Engineering, Materials Engineering, Materials Science +17

Comparison of mobility-limiting mechanisms in high-mobility Si1−<i>x</i>Ge<i>x</i> heterostructures

Don Monroe, Y. H. Xie, Eugene A. Fitzgerald et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 111 citations

Engineering, Materials Engineering, Materials Science +17

Influence of strain on semiconductor thin film epitaxy

Eugene A. Fitzgerald, Srikanth Samavedam, Y. H. Xie et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17