Applied Physics Letters · 1991 · 261 citations · 10 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDislocations In SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSilicon MaterialsTwo-dimensional SemiconductorsConductionElectron MobilityHall EffectHall Effect MeasurementsHeterostructuresModulation DopingTwo-dimensional Electron GasesTwo-dimensional Semiconductor Heterostructures
A modulation-doped Si/GexSi1−x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, GexSi1−x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm2/V s was observed from a similar sample.
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Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs
L. N. Pfeiffer, K. W. West, H. L. Störmer et al. · Applied Physics Letters · 1989 · 415 citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations