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Eugene A. Fitzgerald, Y. H. Xie, M. L. Green, +5

Applied Physics Letters

Materials ScienceSemiconductorsDislocation DensitiesEngineeringBulk Gexsi1−x +13

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Optical MaterialsEngineeringOptoelectronic DevicesRelaxed BuffersSemiconductor Nanostructures +16

Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald, +3

Applied Physics Letters

Modulation-doped Si/gexsi1−x StructureEngineeringSilicon On InsulatorSemiconductor DeviceSemiconductor Nanostructures +16

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe, +9

Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics +11

Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

G. Hasnain, K. Tai, Long Yang, +6

IEEE Journal of Quantum Electronics

Optical MaterialsEngineeringLaser SciencePower PerformanceLaser Physics +19

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, +8

IEEE Transactions on Nuclear Science

Electrical EngineeringIon ImplantationEngineeringPrecursor Ion DamagePhysics +12

Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

Jane P. Chang, M. L. Green, Vincent M. Donnelly, +8

Journal of Applied Physics

Materials ScienceSemiconductorsNitrogen ConcentrationEngineeringCrystalline Defects +13

Absorption and luminescence studies of free-standing porous silicon films

Ya Xie, Mark S. Hybertsen, William L. Wilson, +8

Physical review. B, Condensed matter

EngineeringNanoporous MaterialLuminescent GlassChemistrySilicon On Insulator +14

Explanation of stress-induced damage in thin oxides

D.J. Bude, B. E. Weir, P. J. Silvėrman

Materials ScienceElectrical EngineeringDamage MechanismEngineeringThin Oxides +12

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

Md Ashraful Alam, B. E. Weir, P. J. Silvėrman

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringPercolation ConductancePhysicsApplied Physics +11