B. E. Weir

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 687 citations

Materials Science, Semiconductors, Dislocation Densities +15

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 261 citations

Modulation-doped Si/gexsi1−x Structure, Engineering, Silicon On Insulator +18

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

G. Hasnain, K. Tai, Long Yang et al. · IEEE Journal of Quantum Electronics · 1991 · 189 citations

Optical Materials, Engineering, Laser Science +21