D. Monroe

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Engineering, Materials Science, Physics +17

Decay of ultraviolet-induced fiber Bragg gratings

T. Erdoğan, V. Mizrahi, P. J. Lemaire et al. · Journal of Applied Physics · 1994 · 447 citations

Natural Sciences, Materials Science, Physics +16

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang‐Hyun Oh, D. Monroe, J. M. Hergenrother · IEEE Electron Device Letters · 2000 · 356 citations

Engineering, Electrical Engineering, Electronic Materials +16

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Engineering, Electrical Engineering, Materials Science +17