2002 · 205 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ReliabilityDielectricsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor ReliabilitySemiconductor Thin FilmsBreakdown MechanismsDielectric BreakdownElectrical BreakdownGate DielectricsGate Oxide DegradationGate Oxide ReliabilityOxide ReliabilityReliability Degradation
We study breakdown in high-quality 2-7 nm gate dielectrics, and find that soft breakdown becomes more likely for thinner oxides and for oxides stressed at lower voltages. For 2 nm oxides, an increase in gate noise is the only precise indication of soft breakdown. For many applications, devices should remain functional with the level of gate noise we have observed, after soft breakdown.
6
1.5 nm direct-tunneling gate oxide Si MOSFET's
H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 346 citations