G. B. Alers

Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

G. B. Alers, D. J. Werder, Yves J. Chabal et al. · Applied Physics Letters · 1998 · 264 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +14

Defect dominated charge transport in amorphous Ta2O5 thin films

R. M. Fleming, D. V. Lang, Chris Jones et al. · Journal of Applied Physics · 2000 · 222 citations

Materials Science, Electrical Engineering, Steady State +14

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Resistivity dominated by surface scattering in sub-50 nm Cu wires

Rebekah L. Graham, G. B. Alers, Tom Mountsier et al. · Applied Physics Letters · 2010 · 153 citations

Materials Science, Surface Characterization, Electrical Engineering +15

Existence of an Orientational Electric Dipolar Response in C ₆₀ Single Crystals

G. B. Alers, B. Golding, A. R. Kortan et al. · Science · 1992 · 127 citations

Relaxation Process, Molecular Solid, Dielectric Constant +13