Resistivity dominated by surface scattering in sub-50 nm Cu wires

Abstract

Electron scattering mechanisms in copper lines were investigated to understand the extendibility of copper interconnects when linewidth or thickness is less than the mean free path. Electron-beam lithography and a dual hard mask were used to produce interconnects with linewidths between 25 and 45 nm. Electron backscatter diffraction characterized grain structure. Temperature dependence of the line resistance determined resistivity, which was consistent with existing models for completely diffused surface scattering and line-edge roughness, with little contribution from grain boundary scattering. A simple analytical model was developed that describes resistivity from diffuse surface scattering and line-edge roughness.