D. V. Lang

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Julia W. P. Hsu, Michael J. Manfra, D. V. Lang et al. · Applied Physics Letters · 2001 · 292 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Defect dominated charge transport in amorphous Ta2O5 thin films

R. M. Fleming, D. V. Lang, Chris Jones et al. · Journal of Applied Physics · 2000 · 222 citations

Materials Science, Electrical Engineering, Steady State +14

High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

Michael J. Manfra, L. N. Pfeiffer, K. W. West et al. · Applied Physics Letters · 2000 · 101 citations

Wide-bandgap Semiconductor, Engineering, High-mobility Algan/gan +16

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Michael J. Manfra, Nils Weimann, Julia W. P. Hsu et al. · Journal of Applied Physics · 2002 · 82 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +11

Modulation doping in Ge(<i>x</i>)Si(1−<i>x</i>)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration

R. People, J. C. Bean, D. V. Lang · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 50 citations · Full text

Oxide Heterostructures, Semiconductors, Materials Science +14