K. W. West

High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

Michael J. Manfra, L. N. Pfeiffer, K. W. West et al. · Applied Physics Letters · 2000 · 101 citations

Wide-bandgap Semiconductor, Engineering, High-mobility Algan/gan +16

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Michael J. Manfra, Nils Weimann, Julia W. P. Hsu et al. · Journal of Applied Physics · 2002 · 82 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +11

Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy

Michael J. Manfra, K. W. Baldwin, A. M. Sergent et al. · Applied Physics Letters · 2004 · 69 citations

Engineering, Hall Bar Structure, Electron Mobility +18

Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs

D. J. Eaglesham, J. M. Poate, D. C. Jacobson et al. · Applied Physics Letters · 1991 · 57 citations

Materials Science, Semiconductors, Iv Semiconductors +13

High-quality quantum point contacts in GaN∕AlGaN heterostructures

Hung-Tao Chou, S. Lüscher, David Goldhaber‐Gordon et al. · Applied Physics Letters · 2005 · 42 citations

Semiconductors, Spintronics, Gan∕algan Heterostructures +15