D. J. Eaglesham

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Physical Review Letters · 1990 · 2K citations

Materials Engineering, Materials Science, Engineering +15

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 536 citations

Semiconductors, Engineering, Crystalline Defects +12

Equilibrium shape of Si

D. J. Eaglesham, Alice E. White, L. C. Feldman et al. · Physical Review Letters · 1993 · 494 citations

Materials Science, Engineering, Nuclear Physics +15

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Ion Implantation, Optical Materials, Crystalline Silicon +11