M. Cerullo

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Physical Review Letters · 1990 · 2K citations

Natural Sciences, Materials Science, Physics +17

Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

D. J. Eaglesham, H.‐J. Gossmann, M. Cerullo · Physical Review Letters · 1990 · 325 citations

Engineering, Materials Engineering, Materials Science +17

Low-temperature growth of Ge on Si(100)

D. J. Eaglesham, M. Cerullo · Applied Physics Letters · 1991 · 133 citations

Natural Sciences, Materials Science, Physics +17

370 °C clean for Si molecular beam epitaxy using a HF dip

D. J. Eaglesham, G. S. Higashi, M. Cerullo · Applied Physics Letters · 1991 · 82 citations

Engineering, Materials Engineering, Materials Science +17

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching

M. A. Vyvoda, Hyoyoung Lee, M. V. Malyshev et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 61 citations

Natural Sciences, Materials Science, Physics +14