H.‐J. Gossmann - Concepedia

Author

H.‐J. Gossmann

Also Known As

H- J. Gossmann, H-J Gossmann, H-J. Gossmann, H. -J. Gossmann, H. -J. L. Gossmann, H. Gossmann, H. J. Gossmann, H.- J. Gossmann, H.-J Gossmann, H.-J. Gossmann

152

Publications

6.1K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Oak Ridge National Laboratory Alcatel Lucent (Germany)Rutgers, The State University of New Jersey University at Albany, State University of New York

About

H.‐J. Gossmann is an author at AT&T (United States) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	39	77	5.7K
2	Engineering	38	75	5.6K
3	Natural Sciences	6	6	563
4	Biomedical Engineering	2	2	117
5	Chemistry	2	2	92

H.‐J. Gossmann

Publications

5.9K

Citations

H-Index

Page 1

	Year	Citations
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, Journal of Applied Physics Materials ScienceSemiconductorsSi ImplantsIon ImplantationEngineering	1997	614
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si Paul M. Voyles, David A. Muller, J. L. Grazul, Nature Materials ScienceNanoscale ScienceEngineeringPhysicsMicroscopy	2002	433
Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100) D. J. Eaglesham, H.‐J. Gossmann, M. Cerullo Physical Review Letters Materials ScienceSemiconductorsElectrical EngineeringEpitaxial GrowthEngineering	1990	322
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition P. D. Ye, G. D. Wilk, Bingzheng Yang, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2003	305
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition P.D. Ye, G. D. Wilk, J. Kwo, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringAld ProcessEngineering	2003	245
Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion P.A. Stolk, D. J. Eaglesham, H.‐J. Gossmann, Applied Physics Letters Materials ScienceBoron NitrideEngineeringKev Si ImplantsCarbon Incorporation	1995	199
Simulation of cluster evaporation and transient enhanced diffusion in silicon C.S. Rafferty, George H. Gilmer, M. Jaraı́z, Applied Physics Letters EngineeringImplant EnergySilicon On InsulatorMolecular DynamicsNanoscale Modeling	1996	151
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition P. D. Ye, G. D. Wilk, Bingzheng Yang, Applied Physics Letters Oxide HeterostructuresSemiconductorsElectrical EngineeringGaas ChannelEngineering	2004	144
Arsenic atom location on passivated silicon (111) surfaces J. R. Patel, J. A. Golovchenko, P. E. Freeland, Physical review. B, Condensed matter Materials ScienceSurface CharacterizationEngineeringPhysicsSurface Analysis	1987	128
The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7) H.‐J. Gossmann, L. C. Feldman, W. M. Gibson Surface Science Materials ScienceMaterials EngineeringEngineeringCrystalline DefectsApplied Physics	1985	124

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