H.‐J. Gossmann

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si

Paul M. Voyles, David A. Muller, J. L. Grazul et al. · Nature · 2002 · 433 citations

Materials Science, Nanoscale Science, Engineering +11

Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

D. J. Eaglesham, H.‐J. Gossmann, M. Cerullo · Physical Review Letters · 1990 · 322 citations

Materials Science, Semiconductors, Electrical Engineering +15

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye, G. D. Wilk, Bingzheng Yang et al. · Applied Physics Letters · 2003 · 305 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

P.D. Ye, G. D. Wilk, J. Kwo et al. · IEEE Electron Device Letters · 2003 · 245 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14