21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/b3eb9795ffa7b0d3.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T537,For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-μm gate-length depletion-mode n-channel GaAs MOSFET with an Al ₂ O ₃ gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm ² and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f _T of 14.0 GHz and a maximum oscillation frequency f _max of 25.2 GHz have been achieved from a 0.65-μm gate-length device.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	245
2	Applied Physics	1	1	245
3	Electrical Engineering	1	1	245
4	Semiconductors	1	1	245
5	Thin Films	1	1	245

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