51
Publications
7.2K
Citations
34
H-Index
1979
Active since
G. S. Higashi is an author at AT&T (United States) specializing in engineering, applied physics, and surface science.
Top concepts
EngineeringApplied PhysicsSurface ScienceMaterial SciencePhysicsChemistryNatural SciencesOptoelectronicsSpectroscopySurface Chemistry
Publications per year
1979–2014
51
51
Ideal hydrogen termination of the Si (111) surface
G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations
Materials Science, Surface Characterization, Engineering +14
Yves J. Chabal, G. S. Higashi, K. Raghavachari et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 662 citations
Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF
G. S. Higashi, R. S. Becker, Yves J. Chabal et al. · Applied Physics Letters · 1991 · 487 citations
Engineering, Native Oxide, Chemistry +18
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