J. L. Benton

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Ion Implantation, Optical Materials, Crystalline Silicon +11

Local structure of 1.54-μm-luminescence Er3+ implanted in Si

David Adler, D. C. Jacobson, D. J. Eaglesham et al. · Applied Physics Letters · 1992 · 249 citations

Semiconductors, Photoluminescence, Engineering +13

Interstitial Defect Reactions in Silicon

Lionel C. Kimerling, M. T. Asom, J. L. Benton et al. · Materials science forum · 1989 · 187 citations

Physics, Applied Physics, Defect Formation +3

Hydrogen passivation of point defects in silicon

J. L. Benton, C. J. Doherty, S. D. Ferris et al. · Applied Physics Letters · 1980 · 174 citations

Materials Science, Point Defects, Engineering +12

Oxygen-related donor states in silicon

Lionel C. Kimerling, J. L. Benton · Applied Physics Letters · 1981 · 169 citations · Full text

Engineering, Integrated Circuits, Chemistry +16