J. L. Benton - Concepedia

Author

J. L. Benton

AT&T (United States)

Also Known As

J. Benton, J. L. BENTON, J. L. Benton, J.-L. Benton, J.L. Benton, Janet Benton, Janet L Benton, Janet L. Benton

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Institute for Microelectronics and Microsystems Massachusetts Institute of Technology Sandia National Laboratories Oak Ridge National Laboratory

About

J. L. Benton is an author at AT&T (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	36	2.6K
2	Applied Physics	26	39	2.8K
3	Chemistry	7	7	651
4	Natural Sciences	5	5	367
5	Chemical Engineering	1	1	26

J. L. Benton

Publications

Citations

H-Index

Page 1

	Year	Citations
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon Jürgen Michel, J. L. Benton, R. F. Ferrante, Journal of Applied Physics Ion ImplantationOptical MaterialsCrystalline SiliconEngineeringPhotoluminescence	1991	417
Local structure of 1.54-μm-luminescence Er3+ implanted in Si David Adler, D. C. Jacobson, D. J. Eaglesham, Applied Physics Letters SemiconductorsPhotoluminescenceEngineeringCrystalline DefectsOptical Properties	1992	249
Interstitial Defect Reactions in Silicon Lionel C. Kimerling, M. T. Asom, J. L. Benton, Materials science forum PhysicsApplied PhysicsDefect FormationSilicon On InsulatorInterstitial Defect Reactions	1989	187
Hydrogen passivation of point defects in silicon J. L. Benton, C. J. Doherty, S. D. Ferris, Applied Physics Letters Materials SciencePoint DefectsEngineeringCrystalline DefectsPhysics	1980	174
Oxygen-related donor states in silicon Lionel C. Kimerling, J. L. Benton Applied Physics Letters EngineeringIntegrated CircuitsChemistryJunction Spectroscopy TechniquesSilicon On Insulator	1981	169
Microstructure of erbium-implanted Si D. J. Eaglesham, Jürgen Michel, Eugene A. Fitzgerald, Applied Physics Letters Optical MaterialsEngineeringImplant DoseOptoelectronic DevicesSilicon On Insulator	1991	154
Interstitial defect reactions in silicon M. T. Asom, J. L. Benton, R. Sauer, Applied Physics Letters Materials ScienceRoom-temperature Electron IrradiationEngineeringPhysicsNanoelectronics	1987	146
Evolution from point to extended defects in ion implanted silicon J. L. Benton, Sebania Libertino, P. Kringho j, Journal of Applied Physics Electrical EngineeringIon ImplantationPoint DefectsEngineeringPhysics	1997	141
Electronically controlled reactions of interstitial iron in silicon L. C. Kimerling, J. L. Benton Physica B+C	1983	140
The electrical and defect properties of erbium-implanted silicon J. L. Benton, Jürgen Michel, Lionel C. Kimerling, Journal of Applied Physics EngineeringIon-implanted ErbiumOptoelectronic DevicesSilicon On InsulatorSemiconductors	1991	132

Page 1