Statistics
Publications
42
Citations
3.1K
H-Index
27
Active since
1953
J. L. Benton is an author at AT&T (United States) specializing in materials science, semiconductor materials, and silicon materials.
Publications per year
1953–2003
42
42
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations
Local structure of 1.54-μm-luminescence Er3+ implanted in Si
David Adler, D. C. Jacobson, D. J. Eaglesham et al. · Applied Physics Letters · 1992 · 249 citations
Natural Sciences, Materials Engineering, Materials Science +17
Interstitial Defect Reactions in Silicon
Lionel C. Kimerling, M. T. Asom, J. L. Benton et al. · Materials science forum · 1989 · 188 citations · Full text
Hydrogen passivation of point defects in silicon
J. L. Benton, C. J. Doherty, S. D. Ferris et al. · Applied Physics Letters · 1980 · 174 citations
Oxygen-related donor states in silicon
Lionel C. Kimerling, J. L. Benton · Applied Physics Letters · 1981 · 169 citations · Full text
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