Oxygen-related donor states in silicon

Abstract

Junction spectroscopy techniques have been applied to the study of defect states introduced by heat treatment of silicon containing ∼1018[O]/cm3. Two shallow electron traps are observed, whose concentrations increase with the electron concentration added during a 450 °C anneal. The zero field defect-state activation energies are E(0.07 eV) and E(0.15 eV). Both states display a Poole-Frenkel field emission process as expected for donors.