Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Abstract

The effect of impurity coimplantation in MeV erbium-implanted silicon is studied. A significant increase in the intensity of the 1.54-μm Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room-temperature photoluminescence spectrum of erbium in crystalline silicon.