P.N. Favennec - Concepedia

Author

P.N. Favennec

Also Known As

Favennec, Pierre-Noël, P . Favennec, P . N Favennec, P N Favennec, P. N. FAVENNEC, P. N. Favennec, P.N. Favennec, Pierre-Noel Favennec, Pierre-Noël FAVENNEC, Pierre-Noël Favennec

109

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Centre Hospitalier Lannion Trestel Orange (France)Centre National de la Recherche Scientifique

About

P.N. Favennec is an author at Centre Hospitalier Lannion Trestel specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	29	1.4K
2	Applied Physics	19	29	1.4K
3	Natural Sciences	2	2	39
4	Education	1	1	19
5	Medicine	1	1	17

P.N. Favennec

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials P.N. Favennec, H. L’Haridon, M. Salvi, Electronics Letters EngineeringLuminescent GlassEr3+ Emission IntensityLuminescence PropertyIi-vi Materials	1989	438
Optical Activation of Er<sup>3+</sup> Implanted in Silicon by Oxygen Impurities P.N. Favennec, H. L’Haridon, D. Moutonnet, Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesSilicon On Insulator	1990	148
Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant A. M. Huber, G. Morillot, Nuyen T. Linh, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSi3n4 EncapsulantEngineering	1979	99
Semi-insulating layers of GaAs by oxygen implantation P.N. Favennec Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringIon ImplantationEngineering	1976	92
Anomalous behavior of ion-implanted GaSb R. Callec, P.N. Favennec, M. Salvi, Applied Physics Letters Materials ScienceIon ImplantationAnomalous ElevationsEngineeringPhysics	1991	77
Optical Activation of Ion Implanted Rare-Earths P.N. Favennec, H. L’Haridon, D. Moutonnet, MRS Proceedings Ion ImplantationOptical MaterialsEngineeringOptical PropertiesApplied Physics	1993	56
Schottky and field-effect transistor fabrication on InP and GaInAs S. Loualiche, H. L’Haridon, Alain Le Corre, Applied Physics Letters N-type InpSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1988	47
Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry E. Bedel, G. Landa, R. Carles, Journal of Applied Physics Materials EngineeringMaterials ScienceSecond-order Raman ScatteringMaterial AnalysisEngineering	1986	47
Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements J. Y. Longère, K. Schohe, Stanisław Krawczyk, Journal of Applied Physics Various SuppliersEngineeringLuminescent GlassPhotoluminescence MeasurementsSemiconductors	1990	34
Investigation of compensation in implanted <i>n</i>-GaAs E. V. K. Rao, N. Duhamel, P.N. Favennec, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringIon ImplantationEngineeringPhysics	1978	34

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