Optical Activation of Er³⁺ Implanted in Silicon by Oxygen Impurities

Abstract

Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 10 18 cm -3 of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 µm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.