Nuyen T. Linh - Concepedia

Author

Nuyen T. Linh

Technicolor (France)

Also Known As

Linh, N.T., Linh, Nuyen, N T Linh, N. -T. Thy Linh, N. T. Linh, N.T. Linh, Nguyen Thi Khanh Linh, Nuyen T. Linh

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Technicolor (France)Centre National de la Recherche Scientifique

About

Nuyen T. Linh is an author at Technicolor (France) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	27	1.8K
2	Applied Physics	22	27	1.8K
3	Natural Sciences	2	2	200
4	Chemical Engineering	1	1	79
5	Chemistry	1	1	79

Nuyen T. Linh

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET D. Delagebeaudeuf, Nuyen T. Linh IEEE Transactions on Electron Devices SemiconductorsCharge ControlElectrical EngineeringWide-bandgap SemiconductorEngineering	1982	586
Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE J. Massies, P. Étienne, F. Dézaly, Surface Science Materials ScienceSemiconductorsEngineeringStoichiometry EffectsSurface Science	1980	153
Two-dimensional electron gas m.e.s.f.e.t. structure D. Delagebeaudeuf, P. Delescluse, P. Étienne, Electronics Letters Two-dimensional Electron GasFirst M.e.s.f.e.tElectrical EngineeringWide-bandgap SemiconductorEngineering	1980	121
Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs A. M. Huber, Nuyen T. Linh, M. Valladon, Journal of Applied Physics SemiconductorsSemiconductor TechnologyEngineeringPhysicsElectron Spectroscopy	1979	114
Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant A. M. Huber, G. Morillot, Nuyen T. Linh, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSi3n4 EncapsulantEngineering	1979	99
Effects of H2S adsorption on surface properties of GaAs {100} grown <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> by MBE J. Massies, F. Dézaly, Nuyen T. Linh Journal of Vacuum Science and Technology SemiconductorsIi-vi SemiconductorChemical EngineeringSemiconductor TechnologyEngineering	1980	79
Monocrystalline aluminium ohmic contact to <i>n</i>-GaAs by H2S adsorption J. Massies, J. Chaplart, M. Laviron, Applied Physics Letters Materials ScienceAluminium NitrideEngineeringSurface ScienceApplied Physics	1981	68
Hydrostatic pressure control of the carrier density in GaAs/GaAlAs heterostructures; Role of the metastable deep levels J.-M. Mercy, Cédric Bousquet, Jean-Lοuis Robert, Surface Science EngineeringPhysicsGaas/gaalas HeterostructuresApplied PhysicsCondensed Matter Physics	1984	59
Work function measurements on MBE GaAs(001) layers J. Massies, P. Devoldère, Nuyen T. Linh Journal of Vacuum Science and Technology Materials ScienceSemiconductorsElectrical EngineeringSurface CharacterizationEngineering	1979	53
Silver contact on GaAs (001) and InP (001) J. Massies, P. Devoldère, Nuyen T. Linh Journal of Vacuum Science and Technology SemiconductorsMaterials ScienceSurface PreparationIi-vi SemiconductorEngineering	1978	51

Page 1