Concepedia

Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs

A. M. Huber, Nuyen T. Linh, M. Valladon, J.L. Debrun, G. M. Martin, A. Mitonneau, A. Mircéa

Journal of Applied Physics · 1979 · 114 citations · 24 references

DOI

Concepts

Abstract

From the direct comparison between quantitative atomic oxygen concentration and electronic deep-energy-level concentration in GaAs, it is concluded that oxygen is not involved, either directly or as part of a complex defect, in the origin of the main electron trap at EC−0.75 eV.

References

24

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

, , +16

Electron traps in bulk and epitaxial GaAs crystals

G. M. Martin, A. Mitonneau, A. Mircéa · Electronics Letters · 1977 · 730 citations

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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Simon M. Sze, J.C. Irvin · Solid-State Electronics · 1968 · 687 citations

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A study of deep levels in GaAs by capacitance spectroscopy

D. V. Lang, R. A. Logan · Journal of Electronic Materials · 1975 · 344 citations

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Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques

Lionel C. Kimerling · Journal of Applied Physics · 1974 · 321 citations

, , +17