A. M. Huber

Identification of a defect in a semiconductor:<i>EL</i>2 in GaAs

H. J. von Bardeleben, D. Stiévenard, D. Deresmes et al. · Physical review. B, Condensed matter · 1986 · 240 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs

A. M. Huber, Nuyen T. Linh, M. Valladon et al. · Journal of Applied Physics · 1979 · 114 citations

Semiconductors, Semiconductor Technology, Engineering +14

Identification of EL2 in GaAs

H. J. von Bardeleben, D. Stiévenard, J. C. Bourgoin et al. · Applied Physics Letters · 1985 · 111 citations

Materials Science, Semiconductors, Electrical Engineering +15

Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant

A. M. Huber, G. Morillot, Nuyen T. Linh et al. · Applied Physics Letters · 1979 · 99 citations

Materials Science, Semiconductors, Electrical Engineering +14

The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion Method

K. Kaźmierski, A. M. Huber, G. Morillot et al. · Japanese Journal of Applied Physics · 1984 · 42 citations

Engineering, Chemistry, Semiconductors +19