D. Deresmes

Identification of a defect in a semiconductor:<i>EL</i>2 in GaAs

H. J. von Bardeleben, D. Stiévenard, D. Deresmes et al. · Physical review. B, Condensed matter · 1986 · 240 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds?

D. Stiévenard, D. Deresmes · Applied Physics Letters · 1995 · 116 citations

Si–sio2 Interface, Engineering, Aluminum–porous Silicon Junction +17

Novel insights into the charge storage mechanism in pseudocapacitive vanadium nitride thick films for high-performance on-chip micro-supercapacitors

Kévin Robert, Didier Stiévenard, D. Deresmes et al. · Energy & Environmental Science · 2020 · 102 citations

Materials Science, Supercapacitors, Electrical Engineering +14

Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal-insulator-semiconductor devices

Philippe Fontaine, D. Goguenheim, D. Deresmes et al. · Applied Physics Letters · 1993 · 95 citations

Engineering, Organic Electronics, Semiconductor Materials +22

Electric force microscopy of individually charged nanoparticles on conductors: An analytical model for quantitative charge imaging

Thierry Mélin, H. Diesinger, D. Deresmes et al. · Physical Review B · 2004 · 92 citations

Electric Force Microscopy, Engineering, Microscopy +20